A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories

A new stochastic process was developed by considering the internal performance of macro-states in which sojourn time each one is phase-type distributed depending on time. The stationary distribution calculated through matrix-algorithmic methods and multiple interesting measures were worked out. number visits to a determine macro-state analyzed from respective differential equations Laplace transform. mean between any two times given. results implemented computationally successfully applied study random telegraph noise (RTN) resistive memories. RTN an important concern access memory (RRAM) operation. On hand, it could limit some technological applications these devices; other can be used for physical characterization. Therefore, in-depth statistical analysis model behavior devices essential importance.